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US 2006/0231850 A1Published application
Semiconductor laser diode having ridge portion and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsTan Sakong, Tae-hoon Jang, Joong-kon Son, Han-youl Ryu
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Abstract
Provided is a semiconductor laser diode having a ridge portion and a method of manufacturing the semiconductor laser diode. The semiconductor laser diode includes: a first clad layer, an active layer formed on the first clad layer, a second clad layer formed on the active layer and having a stripe shaped ridge portion; and a buried layer formed of AlGaInN and grown on the second clad layer except for a region of an upper surface of the ridge portion.
Claims21
A semiconductor laser diode comprising:
- a first clad layer;
- an active layer formed on the first clad layer;
- a second clad layer formed on the active layer and having a stripe shaped ridge portion;
- and
- a buried layer formed of AlGaInN and grown on the second clad layer except for a region of an upper surface of the ridge portion.
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A method of manufacturing a semiconductor laser diode, comprising:
- forming an active layer on a first clad layer;
- forming a second clad layer having a ridge stripe structure on the active layer;
- and
- forming a buried layer comprised of AlGaInN on the second clad layer except for the upper surface of the ridge portion, wherein
- the forming of the buried layer comprises:
- forming a mask layer on the upper surface of the ridge portion;
- and
- forming the buried layer grown to a single-crystalline by depositing an Alx1Gay1Inz1N layer on the second clad layer except for a region covered by the mask layer, where x1 is 0.1-0.2, z1 is 0.001 or less, and x1+y1+z1=1.
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Dependencies are inferred from the claim text.