Silicon carbide semiconductor device
AssigneeDenso Corporation
InventorsEiichi Okuno, Toshio Sakakibara
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Abstract
A silicon carbide semiconductor device includes a semiconductor element disposed in a semiconductor substrate having a first conductive type silicon carbide layer and a silicon substrate. The device includes: a trench on the silicon carbide layer to reach the silicon substrate; and a conductive layer in the trench between the silicon carbide layer and the silicon substrate to connect to both of them. The semiconductor element is a vertical type semiconductor element so that current flows on both of a top surface portion and a backside surface portion of the semiconductor substrate. The current flows through the conductive layer.
Claims19
A silicon carbide semiconductor device including a semiconductor element, wherein the semiconductor element is disposed in a semiconductor substrate having a first conductive type silicon carbide layer and a silicon substrate, and wherein the first conductive type silicon carbide layer is disposed on a principal surface of the silicon substrate, the device comprising:
- a trench disposed on a surface of the silicon carbide layer to reach the silicon substrate;
- and
- a conductive layer disposed in the trench at a boundary portion between the silicon carbide layer and the silicon substrate to connect to both of the silicon carbide layer and the silicon substrate, wherein
- the semiconductor element is a vertical type semiconductor element so that current flows on both of a top surface portion and a backside surface portion of the semiconductor substrate, and
- the current flows through the conductive layer.
A silicon carbide semiconductor device including a semiconductor element, wherein the semiconductor element is disposed in a semiconductor substrate having a first conductive type silicon carbide layer and a silicon substrate, and wherein the first conductive type silicon carbide layer is disposed on a principal surface of the silicon substrate, the device comprising:
- a trench disposed on a backside surface of the silicon substrate to reach the silicon carbide layer;
- and
- a backside electrode disposed in the trench at a boundary portion between the silicon carbide layer and the silicon substrate to connect to both of the silicon carbide layer and the silicon substrate, wherein
- the semiconductor element is a vertical type semiconductor element so that current flows on both of a foreside surface portion and a backside surface portion of the semiconductor substrate, and
- the current flows through the backside electrode.
Dependencies are inferred from the claim text.