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US 2006/0231829 A1Published application
TFT gate dielectric with crosslinked polymer
AssigneeXerox Corporation
InventorsYiliang Wu, Ping Liu, Beng Ong
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Abstract
A thin film transistor composed of a gate dielectric which includes a radiation-induced crosslinked polymer composed of polymerized one or more monomers, wherein the one or more monomers include an optionally substituted vinyl arylalcohol.
Claims20
A thin film transistor comprising a gate dielectric which includes a radiation-induced crosslinked polymer comprising polymerized one or more monomers, wherein the one or more monomers include an optionally substituted vinyl arylalcohol.
A thin film transistor comprising:
- (a) a semiconductor layer;
- (b) a gate electrode;
- (c) a source electrode in contact with the semiconductor layer;
- (d) a drain electrode in contact with the semiconductor layer;
- and
- (e) a gate dielectric disposed between the semiconductor layer and the gate electrode, wherein the gate dielectric comprises a radiation-induced crosslinked polymer comprising polymerized one or more monomers, wherein the one or more monomers includes an optionally substituted vinyl arylalcohol.
3 more elements
A process comprising:
- (a) depositing a composition including a polymer comprising polymerized one or more monomers, wherein the one or more monomers includes an optionally substituted vinyl arylalcohol;
- and
- (b) irradiating the composition to crosslink the polymer.
A process for fabricating a thin film transistor comprising:
- (a) depositing a gate dielectric precursor composition, wherein the gate dielectric precursor composition includes a polymer comprising polymerized one or more monomers, wherein the one or more monomers includes an optionally substituted vinyl arylalcohol;
- and
- (b) irradiating the gate dielectric precursor composition to crosslink the polymer.
Dependencies are inferred from the claim text.