Charged particle beam apparatus
AssigneeHitachi High-Technologies Corporation
InventorsSouichi Katagiri, Takashi Ohshima, Toshihide Agemura, Mitsugu Sato, Takashi Furukawa
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Abstract
A small-sized charged particle beam apparatus capable of maintaining high vacuum even during emission of an electron beam is provided. A nonevaporative getter pump is placed upstream of differential pumping of an electron optical system of the charged particle beam apparatus, and a minimum number of ion pumps are placed downstream, so that both the pumps are used in combination. Further, by mounting a detachable coil on an electron gun part, the inside of a column can be maintained under high vacuum with a degree of vacuum in the order of 10−8 Pa.
Claims19
A charged particle beam apparatus having a differential pumping system with two or more vacuum chambers coupled together via an aperture, comprising a nonevaporative getter pump on an upstream side having a high degree of vacuum and an ion pump on a downstream side.
A magnetic-field-superposed electron gun having a differential pumping system with two or more vacuum chambers coupled together via an aperture, comprising a nonevaporative getter pump of an upstream side, an ion pump in any of the vacuum chambers on a downstream side, and an electron source on a most upstream vacuum chamber, and further comprising a permanent magnet in the proximity of the electron source and at least two different magnetic poles at axisymmetric positions with respect to the electron source therebetween.
A mirror electron inspection apparatus comprising:
- a first electron optical system column detecting mirror electrons;
- a second electron optical system column detecting secondary electrons and backscattered electrons;
- a sample stage mounting an inspection object sample;
- a vacuum sample chamber storing the sample stage therein and having said first electron optical system column and said second electron optical system column fixed therein;
- and
- signal processing means for processing detection signals acquired by said first electron optical system column and said second electron optical system column,
- wherein an acquired image in said first electron optical system column and an acquired image in said second electron optical system column can be compared with each other.
Dependencies are inferred from the claim text.