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US 2006/0231738 A1Published application
CCD device
AssigneeE2V Technologies (UK) Limited
InventorMark Robbins
Life of this patent
Estimating the term…
Abstract
A CCD device includes multiplication elements arranged so as to multiply charge by clocking with a high voltage. An additional region beneath the high voltage electrode is so doped in relation to at least the preceding electrode as to have a higher depleted charge density than under the preceding electrode. This assists in preventing high energy electrodes from encountering the silicon surface of the semiconductor.
Claims9
A CCD device of the type in which charge gain is attained by impact ionisation within multiple elements, each element comprising:
- a sequence of electrodes on the surface of a semiconductor one of the sequence of electrodes being a high voltage electrode and having a voltage level applied, in use, so as to cause charge multiplication, a region of the semiconductor beneath the high voltage electrode being so doped in relation to a region under at least the preceding electrode in the sequence so as to have a higher depleted charge density than under the preceding electrode in the sequence.
Dependencies are inferred from the claim text.