Light emitting diode element

A light emitting diode element having a light emitting diode sealed by glass, wherein the glass consists essentially of, as represented by mol % based on the following oxides, from 20 to 55% of B2O3, from 1 to 20% of Bi2O3, from 0 to 30% of ZnO, from 0 to 20% of SiO2+GeO2, from 0 to 30% of Li2O+Na2O+K2O, and from 0 to 30% of MgO+CaO+SrO+BaO.

A light emitting diode element having a light emitting diode sealed by glass, wherein the glass consists essentially of, as represented by mol % based on the following oxides, from 20 to 70% of TeO2, from 3 to 30% of ZnO, from 0 to 55% of B2O3, from 0 to 10% of SiO2+GeO2, from 0 to 30% of Li2O+Na2O+K2O, and from 0 to 20% of MgO+CaO+SrO+BaO.

A light emitting diode element having a substrate having an average linear expansion coefficient of from 70×10−7 to 90×10−7/° C. within a range of from 50 to 300° C., wherein the substrate is covered with glass which has a softening point of at most 500° C., an average linear expansion coefficient of from 65×10−7 to 95×10−7/° C. within a range of from 50 to 300° C., an internal transmittance of at least 80% with a thickness of 1 mm for a light having a wavelength of 405 nm and a refractive index of at least 2.0 for the same light.

A light emitting diode element having a substrate having an average linear expansion coefficient of from 70×10−7 to 90×10−7/° C. within a range of from 50 to 300° C., wherein the substrate is covered with glass which has a softening point of at most 500° C., an average linear expansion coefficient of from 65×10−7 to 95×10−7/° C. within a range of from 50 to 300° C., an internal transmittance of at least 80% with a thickness of 1 mm for a light having a wavelength of 405 nm and a refractive index of at least 1.7 for the same light and which contains no PbO.

Glass for covering a light emitting diode element, which has an internal transmittance of at least 80% with thickness of 1 mm for a light having a wavelength of 405 nm and which consists essentially of, as represented by mol % based on the following oxides, from 40 to 53% of TeO2, from 0 to 10% of GeO2, from 5 to 30% of B2O3, from 0 to 10% of Ga2O3, from 0 to 10% of Bi2O3, from 3 to 20% of ZnO, from 0 to 3% of Y2O3, from 0 to 3% of La2O3, from 0 to 7% of Gd2O3 and from 0 to 5% of Ta2O5, and TeO2+B2O3 is at most 75 mol %.