Methods for forming an assembly for transfer of a useful layer
AssigneeS.O.I.Tec Silicon on Insulator Technologies S.A., a French company
InventorsFabrice Letertre, Olivier Rayssac
Life of this patent
Estimating the term…
Loading patent…
AssigneeS.O.I.Tec Silicon on Insulator Technologies S.A., a French company
InventorsFabrice Letertre, Olivier Rayssac
Estimating the term…
Methods for transferring of a useful layer from a support are described. In an embodiment, the method includes for facilitating transfer of a useful layer from a support by providing an interface in a first support to define a useful layer; and forming a peripheral recess on the first support below the interface so that the periphery of the interface is exposed to facilitate removal and transfer of the useful layer. An epitaxial layer can be formed on the useful layer after forming the recess, with the width and depth of the recess being sufficient to accommodate the volume of residual material resulting from formation of the epitaxial layer without covering the periphery of the interface. Alternatively, an epitaxial layer can be formed on the useful layer after forming the recess, wherein the peripheral recess is configured for receiving sufficient residual material from the epitaxial layer to prevent bonding between the residual material and the useful layer.
A method for facilitating transfer of a useful layer from a support which method comprises:
Dependencies are inferred from the claim text.