Probe of scanning probe microscope having a field effect transistor channel and fabrication method thereof
AssigneePostech Foundation
InventorsWonkyu Moon, Geunbae Lim, Sang Lee
Life of this patent
Estimating the term…
Abstract
Disclosed is a probe of a scanning probe microscope having a sharp tip and an increased electric characteristic by fabricating a planar type of field effect transistor and manufacturing a conductive carbon nanotube on the planar type field effect transistor. To achieve this, the present invention provides a method for fabricating a probe having a field effect transistor channel structure including fabricating a field effect transistor, making preparations for growing a carbon nanotube at a top portion of a gate electrode of the field effect transistor, and generating the carbon nanotube at the top portion of the gate electrode of the field effect transistor.
Claims22
A method for fabricating a probe having a field effect transistor channel structure, comprising:
- a) fabricating a field effect transistor;
- b) making preparations to grow a carbon nanotube at a top portion of a gate electrode of the field effect transistor;
- and
- c) generating the carbon nanotube at the prepared top portion of the gate electrode of the field effect transistor.
A probe of a scanning probe microscope comprising a source region, a drain region, and a channel region formed on a semiconductor substrate, a source electrode and a drain electrode for electrically coupling the source region and the drain region, a gate electrode insulated from the source electrode and the drain electrode, and a carbon nanotube is formed at a top portion of the gate electrode.
Dependencies are inferred from the claim text.