Method of designing semiconductor integrated circuit and apparatus for designing the same
AssigneeKabushiki Kaisha Toshiba
InventorYasuhito Itaka
Life of this patent
Estimating the term…
Abstract
A method of designing a semiconductor integrated circuit having a plurality of transistors calculates a leak current corresponding to a sum of a gate leak and a channel leak at each node in the semiconductor integrated circuit, estimates a voltage drop value due to the calculated leak current, determines whether or not the voltage drop value exceeds a threshold value for each node, and inserts a buffer to a node determined that the voltage drop value exceeds the threshold value.
Claims20
A method of designing a semiconductor integrated circuit having a plurality of transistors, comprising:
- calculating a leak current corresponding to a sum of a gate leak and a channel leak at each node in the semiconductor integrated circuit;
- estimating a voltage drop value due to the calculated leak current;
- determining whether or not the voltage drop value exceeds a threshold value for each node;
- and
- inserting a buffer to a node determined that the voltage drop value exceeds the threshold value.
A method of designing a semiconductor integrated circuit, comprising:
- calculating a leak current corresponding to a sum of a gate leak and a channel leak at each node in the semiconductor integrated circuit;
- estimating a voltage drop value due to the calculated leak current;
- determining whether or not the voltage drop value exceeds a threshold value at each node;
- and
- forming a gate insulating film of at least one of the transistors connected to the node determined that the voltage drop value exceeds the threshold value more thickly than the other transistors.
A apparatus for designing a semiconductor integrated circuit, comprising:
- a leak current calculating unit which calculates a leak current corresponding to a sum of a gate leak and a channel leak at each node in the semiconductor integrated circuit;
- a voltage drop estimating unit which estimates a voltage drop value due to the calculated leak current;
- a voltage drop determining unit which determines whether or not the voltage drop value exceeds a threshold value at each node;
- and
- a design changing unit which inserts a buffer to a node determined that the voltage drop value exceeds the threshold value, or forms a gate insulating film of at least one of the transistors connected to the node determined that the voltage drop value exceeds the threshold value more thickly than the other transistors.
Dependencies are inferred from the claim text.