Bipolar transistor and radio frequency amplifier circuit
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorMasahiro Maeda
Life of this patent
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Abstract
A bipolar transistor and a radio frequency amplifier circuit capable of preventing thermal runaway in the bipolar transistor without affecting the radio frequency amplifier circuit, which includes: a direct-current (DC) bias terminal to which a DC bias is supplied; a DC base electrode connected to the DC terminal; a radio frequency (RF) power terminal to which a radio frequency signal is supplied; an RF base electrode connected to the RF terminal; and a base layer connected to the DC base electrode and the RF base electrode.
Claims20
A bipolar transistor comprising:
- a first terminal;
- a second terminal;
- a first base electrode connected to said first terminal;
- a second base electrode connected to said second terminal;
- and
- a base layer connected to said first base electrode and said second base electrode.
A radio frequency amplifier circuit comprising
- a bipolar transistor including:
- a first terminal;
- a second terminal;
- a first base electrode connected to said first terminal;
- a second base electrode connected to said second terminal;
- a bipolar transistor including a base layer connected to said first base electrode and said second base electrode.
A bipolar transistor comprising:
- a first base electrode to which a first signal is supplied;
- a second base electrode to which a second signal is supplied;
- and
- a base layer connected to said first base electrode and said second base electrode,
- wherein said first base electrode and said second base electrode are connected electrically only via said base layer.
Dependencies are inferred from the claim text.