Ald metal oxide deposition process using direct oxidation
AssigneeApplied Materials, Inc.
InventorsCraig Metzner, Shreyas Kher, Vidyut Gopal, Shixue Han, Shankarram Athreya
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Abstract
Methods of forming metal compounds such as metal oxides or metal nitrides by sequentially introducing and then reacting metal organic compounds with ozone one or with oxygen radicals or nitrogen radicals formed in a remote plasma chamber. The metal compounds have surprisingly and significantly improved uniformity when deposited by atomic layer deposition with cycle times of at least 10 seconds. The metal compounds also do not contain detectable carbon when the metal organic compound is vaporized at process conditions in the absence of solvents or excess ligands.
Claims20
A method for forming a hafnium material on a substrate, comprising:
- positioning a substrate within a process chamber;
- exposing the substrate to a hafnium precursor comprising the chemical formula (R′RN)4Hf, wherein each R and R′ is independently a hydrogen group or an alkyl group having from one to four carbon atoms;
- exposing the substrate to active oxygen species formed by a remote plasma source;
- and
- exposing the substrate to active nitrogen species.
A method for forming a hafnium material on a substrate, comprising:
- positioning a substrate within a process chamber;
- exposing the substrate to a process gas comprising a hafnium organic precursor to form a layer of the hafnium organic precursor;
- purging the process chamber with a purge gas;
- exposing the substrate to active oxygen species to form an oxide layer thereon;
- purging the process chamber with the purge gas;
- exposing the substrate to the hafnium organic compound to form another layer of the hafnium organic precursor;
- purging the process chamber with the purge gas;
- exposing the substrate to active nitrogen species generated by a remote plasma source to form a nitride layer thereon;
- and
- purging the process chamber with the purge gas.
A method for forming a hafnium material on a substrate, comprising:
- positioning a substrate within a process chamber;
- exposing the substrate sequentially to a hafnium precursor and active oxygen species, wherein the hafnium precursor comprises the chemical formula (R′RN)4Hf, each R and R′ is independently a hydrogen group or an alkyl group having from one to four carbon atoms, and the active oxygen species comprises ozone or other oxygen radicals;
- and
- exposing the substrate to active nitrogen species.
Dependencies are inferred from the claim text.