Film formation method and recording medium
AssigneeTokyo Electron Limited
InventorKouji Shimomura
Life of this patent
Estimating the term…
Abstract
A method of forming a metal silicate film on a silicon substrate in a processing container is disclosed that includes the steps of (a) forming a base oxide film on the silicon substrate by feeding an oxidation gas into the processing container; and (b) forming the metal silicate film on the base oxide film by continuing to feed the oxidation gas and by feeding a first gaseous phase material formed of an amidic organic hafnium compound and a second gaseous phase material formed of a silicon-containing material into the processing container.
Claims15
A method of forming a metal silicate film on a silicon substrate in a processing container, the method comprising the steps of:
- (a) forming a base oxide film on the silicon substrate by feeding an oxidation gas into the processing container;
- and
- (b) forming the metal silicate film on the base oxide film by continuing to feed the oxidation gas and by feeding a first gaseous phase material formed of an amidic organic hafnium compound and a second gaseous phase material formed of a silicon-containing material into the processing container.
A computer-readable recording medium storing a program for causing a computer to execute a film formation method by a film formation apparatus including a processing container retaining a silicon substrate therein, an oxidation gas feed part to feed an oxidation gas into the processing container, and a material gas feed part to feed a first gaseous phase material formed of an amidic organic hafnium compound and a second gaseous phase material formed of a silicon-containing material into the processing container, the film formation method comprising the steps of:
- (a) forming a base oxide film on the silicon substrate by feeding the oxidation gas into the processing container;
- and
- (b) forming a metal silicate film on the base oxide film by continuing to feed the oxidation gas and by feeding the first gaseous phase material and the second gaseous phase material into the processing container.
Dependencies are inferred from the claim text.