Method of forming a semiconductor device having asymmetric dielectric regions and structure thereof

A method for forming a semiconductor device, the method comprising:

• providing a semiconductor substrate;
• forming a dielectric layer over the semiconductor substrate;
• forming a gate electrode over the dielectric layer, wherein the gate electrode has a first side and a second side opposite the first side;
• implanting an oxidation enhancing species into the first side of the gate electrode and a first area of the semiconductor substrate, wherein the first area is under the gate electrode and adjacent the first side of the gate electrode;
• and
• converting the first area to a first dielectric and a second area of the semiconductor substrate, wherein the second area is under the gate electrode and adjacent the second side of the gate electrode, to a second dielectric, wherein the thickness of the first dielectric is greater than the thickness of the second dielectric.

A semiconductor device comprising:

• a semiconductor substrate;
• a gate electrode over the semiconductor substrate having a first side and a second side;
• and
• a gate dielectric under the gate electrode, wherein the gate dielectric has a first area under the gate electrode and adjacent the first side of the gate electrode;
• a second area under the gate electrode and adjacent the second side of the gate electrode;
• and a third area under the gate electrode that is between the first area and the second area;
• wherein the first area is thinner than the second area, and the third are is thinner than the first area and is thinner than the second area.