Single wafer thermal CVD processes for hemispherical grained silicon and nano-crystalline grain-sized polysilicon
AssigneeApplied Materials, Inc.
InventorsMing Li, Kevin Cunningham, Sheeba Panayil, Guangcai Xing, R. Iyer
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Abstract
Methods for depositing hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers are provided. The hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers are deposited in single substrate chemical vapor deposition chambers. The hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers may be used as electrode layers in semiconductor devices. In one aspect, a two step deposition process is provided to form a nanocrystalline grain-sized polysilicon layer with a reduced roughness.
Claims20
A method of forming a hemispherical grained silicon layer on a substrate, comprising:
- introducing a silicon-containing precursor and a carrier gas into a single substrate chemical vapor deposition chamber;
- and
- thermally decomposing the silicon-containing precursor to deposit a hemispherical grained silicon layer on the substrate, wherein the substrate is supported on a substrate support in the chamber, the substrate support is maintained at a temperature between about 670° C. and about 710° C., and the chamber is maintained at a pressure between about 100 Torr and about 350 Torr during the deposition.
A method of forming a nanocrystalline grain-sized polysilicon layer on a substrate, comprising:
- introducing a silicon-containing precursor and a carrier gas into a single substrate chemical vapor deposition chamber;
- thermally decomposing the silicon-containing precursor to deposit a nanocrystalline grain-sized polysilicon layer on the substrate, wherein the substrate is supported on a substrate support in the chamber, the substrate support is maintained at a temperature between about 700° C. and about 730° C., and the chamber is maintained at a pressure between about 150 Torr and about 350 Torr during the deposition;
- and
- annealing the nanocrystalline grain-sized polysilicon layer.
A method of forming a nanocrystalline grain-sized polysilicon layer on a substrate, comprising:
- introducing a silicon-containing precursor and a carrier gas into a single substrate chemical vapor deposition chamber, wherein the silicon-containing precursor is introduced into the chamber at a first flow rate;
- thermally decomposing the silicon-containing precursor to deposit a first nanocrystalline grain-sized polysilicon layer on the substrate, wherein the substrate is supported on a substrate support in the chamber, the substrate support is maintained at a temperature between about 700° C. and about 730° C., and the chamber is maintained at a pressure between about 150 Torr and about 350 Torr during the deposition;
- and
- reducing the flow rate of the silicon-containing precursor into the single substrate chemical vapor deposition chamber, and depositing a second nanocrystalline grain-sized polysilicon layer on the first nanocrystalline grain-sized silicon layer.
Dependencies are inferred from the claim text.