Nitride semiconductor device and manufacturing method thereof
AssigneeSharp Kabushiki Kaisha
InventorsMayuko Fudeta, Satoshi Komada
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Abstract
A method of manufacturing a nitride semiconductor device includes the steps of forming a groove on a surface of a first substrate by scribing, and forming a nitride semiconductor layer on the surface where the groove is formed. In addition, the method includes the steps of bonding the nitride semiconductor layer and a second substrate together and separating the nitride semiconductor layer and the first substrate from each other. With this manufacturing method, a nitride semiconductor device can be obtained with high yield.
Claims21
A method of manufacturing a nitride semiconductor device, comprising the steps of:
- forming a groove on a surface of a first substrate by scribing;
- and
- forming a nitride semiconductor layer on the surface where said groove is formed.
A nitride semiconductor device, comprising:
- a conductive substrate;
- a nitride semiconductor layer;
- and
- an adhesion layer formed from a eutectic bonding metal between said conductive substrate and said nitride semiconductor layer;
- wherein
- said eutectic bonding metal contains AuSn.
A nitride semiconductor device, comprising:
- a conductive substrate;
- a nitride semiconductor layer;
- and
- a metal layer formed between said conductive substrate and said nitride semiconductor layer.
Dependencies are inferred from the claim text.