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US 2006/0223328 A1Published application
Apparatus and method for manufacturing semiconductor device, and electronic apparatus
AssigneeSeiko Epson Corporation
InventorsSumio Utsunomiya, Mitsuru Sato
Life of this patent
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Abstract
A method for manufacturing a semiconductor device, comprises providing a semiconductor layer deposited on a substrate with heat treatment by using a flame of a gas burner fueled by a hydrogen-and-oxygen mixed gas as a heat source.
Claims20
A method for manufacturing a semiconductor device, comprising:
- providing a semiconductor layer deposited on a substrate with heat treatment by using a flame of a gas burner fueled by a hydrogen-and-oxygen mixed gas as a heat source.
A method for manufacturing a semiconductor device, comprising:
- depositing a semiconductor layer on a substrate;
- providing first heat treatment to recrystallize the semiconductor layer by using a flame of a gas burner fueled by a hydrogen-and-oxygen mixed gas that is hydrogen rich as a heat source;
- providing an oxidized film to the semiconductor layer that has undergone the first heat treatment;
- and
- providing second heat treatment to modify the semiconductor layer that has been provided with the oxidized film by using a flame of a gas burner fueled by a hydrogen-and-oxygen mixed gas that is oxygen rich as a heat source.
2 more elements
A semiconductor manufacturing apparatus, comprising:
- a water tank that stores water;
- an electrolytic tank in which the water is decomposed into a hydrogen-and-oxygen mixed gas by an electric current;
- a gas burner that combusts the hydrogen-and-oxygen mixed gas to provide a linear flame;
- a gas controller that adds a gas to the mixed gas to regulate a mixing ratio of the mixed gas;
- and
- a moving mechanism that moves a semiconductor substrate relative to the flame of the gas burner in a direction perpendicular to the flame.
3 more elements
Dependencies are inferred from the claim text.