Fabrication method of semiconductor device
AssigneeEudyna Devices Inc.
InventorMasahiro Nishi
Life of this patent
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Abstract
A fabrication method of a semiconductor device includes steps of performing any one of O2 ashing, organic processing, and dry etching on a surface of a GaN-based semiconductor layer, etching the surface of the GaN-based semiconductor layer in a mixed solution of acid and an oxidizing agent, and forming an electrode on the surface of the GaN-based semiconductor layer.
Claims10
A fabrication method of a semiconductor device comprising:
- performing any one of O2 ashing, organic processing, and dry etching on a surface of a GaN-based semiconductor layer;
- etching the surface of the GaN-based semiconductor layer in a mixed solution of acid and an oxidizing agent;
- and
- forming an electrode on the surface of the GaN-based semiconductor layer.
A fabrication method of a semiconductor device comprising:
- performing any one of O2 ashing, organic processing, and dry etching on a surface of a GaN-based semiconductor layer;
- dry etching the surface of the GaN-based semiconductor layer by a gas that includes Cl;
- and
- forming an electrode on the surface of the GaN-based semiconductor layer.
A fabrication method of a semiconductor device comprising:
- forming an insulation film on a surface of a GaN-based semiconductor layer;
- providing a mask having an opening on the insulation film;
- removing the insulation film through the mask to expose the GaN-based semiconductor layer;
- etching an exposed portion of the GaN-based semiconductor layer in a mixed solution of acid and an oxidizing agent;
- and
- forming an electrode on the exposed portion of the GaN-based semiconductor layer.
A fabrication method of a semiconductor device comprising:
- forming an insulation film on a surface of a GaN-based semiconductor layer;
- providing a mask having an opening on the insulation film;
- removing the insulation film through the mask to expose the GaN-based semiconductor layer;
- dry etching the GaN-based semiconductor layer by a gas that includes Cl;
- and
- forming an electrode on the exposed portion of the GaN-based semiconductor layer.
A fabrication method of a semiconductor device comprising:
- etching a surface of a GaN-based semiconductor layer in a mixed solution of acid and an oxidizing agent;
- and
- providing an insulation film on the surface of the GaN-based semiconductor layer.
A fabrication method of a semiconductor device comprising:
- dry etching a surface of a GaN-based semiconductor layer by a gas that includes Cl;
- and
- providing an insulation film on the surface of the GaN-based semiconductor layer.
Dependencies are inferred from the claim text.