Method of forming an interconnect structure
AssigneeApplied Materials, Inc.
InventorsLiang-Yuh Chen, Daniel Carl, Israel Beinglass
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Abstract
A method of layer formation on a substrate with high aspect ratio features is disclosed. The layer is formed from a gas mixture comprising one or more process gases and one or more etch species. The one or more process gases react to deposit a material layer on the substrate. In conjunction with the material layer deposition, the etch species selectively remove portions of the deposited material layer adjacent to high aspect ratio feature openings, filling such features in a void-free and/or seam-free manner. The material layer may be deposited on the substrate using physical vapor deposition (PVD) and/or chemical vapor deposition (CVD) techniques.
Claims10
A method of forming an interconnect structure, comprising:
- positioning a substrate having high aspect ratio features in a deposition chamber;
- providing a first gas mixture to the deposition chamber, wherein the first gas mixture comprises one or more first process gases and one or more first etch species;
- and
- depositing a barrier layer on the substrate, wherein the first etch species in the first gas mixture selectively removes portions of the barrier layer deposited adjacent to the high aspect ratio features.
Dependencies are inferred from the claim text.