Method of forming a trench structure
AssigneeApplied Materials, Inc.
InventorsLiang-Yuh Chen, Daniel Carl, Israel Beinglass
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Abstract
A method of layer formation on a substrate with high aspect ratio features is disclosed. The layer is formed from a gas mixture comprising one or more process gases and one or more etch species. The one or more process gases react to deposit a material layer on the substrate. In conjunction with the material layer deposition, the etch species selectively remove portions of the deposited material layer adjacent to high aspect ratio feature openings, filling such features in a void-free and/or seam-free manner. The material layer may be deposited on the substrate using physical vapor deposition (PVD) and/or chemical vapor deposition (CVD) techniques.
Claims7
A method of forming a trench structure, comprising:
- positioning a substrate having high aspect ratio features in a deposition chamber;
- providing a gas mixture to the deposition chamber, wherein the gas mixture comprises one or more process gases and one or more etch species;
- and
- depositing an oxide layer on the substrate, wherein the etch species in the gas mixture selectively removes portions of the material layer deposited adjacent to the high aspect ratio features.
Dependencies are inferred from the claim text.