High-density plasma (HDP) chemical vapor deposition (CVD) methods and methods of fabricating semiconductor devices employing the same
AssigneeSamsung Electronics Co., Lgd.
InventorsJeong-Hoon Nam, Jin-Ho Jeon
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Abstract
In one embodiment, a semiconductor substrate is placed into a process chamber. A gas mixture including a silicon-containing gas, a fluorine-containing gas, an inert gas, and an oxygen gas is introduced into the chamber at a pressure range of from about 30 mTorr to about 90 mTorr. During this time, deposition and etching processes are concurrently performed using a plasma to form a high-density plasma (HDP) insulating layer on the semiconductor substrate. A ratio of deposition to etching is from about 3:1 to about 10:1. A ratio of a flow rate of the fluorine-containing gas to a flow rate of the silicon-containing gas is less than about 0.9.
Claims10
A method of manufacturing a semiconductor device, the method comprising:
- placing a semiconductor substrate with a trench in a chamber;
- forming a first insulating layer on a bottom of the trench;
- concurrently performing deposition and etching processes to form a gap-fill dielectric layer over the first insulating layer by introducing a gas mixture comprising a silicon-containing gas, a fluorine-containing gas, an inert gas, an oxygen gas, and also a hydrogen gas into the chamber under a high-density plasma condition at a pressure range of from about 30 mTorr to about 90 mTorr,
- wherein a ratio of a flow rate of the fluorine-containing gas to a flow rate of the silicon-containing gas is less than about 0.9.
A method of manufacturing a semiconductor device, the method comprising:
- forming a trench in a semiconductor substrate;
- forming a first insulating layer on a bottom of the trench;
- and
- concurrently performing deposition and etching processes to form a gap-fill dielectric layer over the first insulating layer by using a plasma and a gas mixture comprising a silicon-containing gas, a fluorine-containing gas, an inert gas, an oxygen gas, and also a hydrogen gas at a pressure range of from about 30 mTorr to about 90 mTorr,
- wherein a ratio of a flow rate of the fluorine-containing gas to a flow rate of the silicon-containing gas is about 0.5 to about 0.9 and a ratio of a flow rate of the hydrogen gas to a flow rate of the fluorine-containing gas is at least about 5:1 during the concurrent deposition and etching processes.
Dependencies are inferred from the claim text.