Polishing technique to minimize abrasive removal of material and composition therefor
OwnerKevin Cooper, Jennifer Cooper +4inventors
InventorsKevin Cooper, Jennifer Cooper, Janos Farkas, John Flake, Johannes Groschopf, Yuri Solomentsev
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Abstract
The present invention provides a composition and a method of polishing a surface that minimizes abrasive removal of material from the surface. To that end, the composition is formulated to maximize dissolution of the material from the surface.
Claims33
A composition comprising:
- a carrier solution;
- a complexing agent to dissolve a predetermined material;
- and
- a corrosion inhibitor to minimize kinetic removal of said predetermined material,
- wherein said carrier solution, said complexing agent and said corrosion inhibitor being present in sufficient quantities to provide said composition with a neutral pH;
- and
- wherein said composition has a particle content no greater than approximately two hundred and fifty parts per million.
A composition comprising:
- a carrier solution including hydrogen peroxide;
- a complexing agent;
- and
- a corrosion inhibitor,
- wherein said carrier solution, said complexing agent and said corrosion inhibitor are present in sufficient quantities to provide said composition with a neutral pH, with a range of particles contained therein in a range of zero to 250 parts per million.
A method for polishing a layer containing conductive material and dielectric material, said method comprising:
- removing portions of said layer by exposing said layer to a composition at a rate of removal, with said rate of removal being principally controlled by a dissolution of said layer with said composition,
- wherein said composition includes a quantity of particles in a range of zero to two hundred fifty parts per million.
A method for polishing a layer having conductive material and dielectric material, said method comprising:
- removing portions of said layer using a composition to generate a substantially smooth surface including first and second regions, with said first region including said conductive material and said second region including said dielectric material, wherein kinetics of conductive oxide formation do not principally control the removal of material from one of said first and second regions.
A method for making a semiconductor device comprising:
- providing a slurry composition having a particle content no greater than approximately two hundred and fifty parts per million and comprising:
- a carrier solution;
- a complexing agent to dissolve a predetermined material;
- and
- a corrosion inhibitor to minimize kinetic removal of said predetermined material,
- wherein said carrier solution, said complexing agent and said corrosion inhibitor being present in sufficient quantities to provide said composition with a neutral pH;
- providing a semiconductor substrate having a trench formed within a dielectric layer, the trench having a metal layer therein;
- providing a polishing apparatus having a polishing pad;
- polishing a surface of the semiconductor substrate using the polishing pad and the slurry composition.
Dependencies are inferred from the claim text.