Method of treating a composite spin-on glass/anti-reflective material prior to cleaning
AssigneeTokyo Electron Limited
InventorPaul Schilling
Life of this patent
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Abstract
Methods are provided for cleaning a microelectronic device, and one method includes providing a substrate having a patterned SOG/anti-reflective material; performing a process to cure the patterned SOG/anti-reflective material; and performing a cleaning process to remove the cured SOG/anti-reflective material. An apparatus for cleaning a microelectronic device is provided that includes a processing chamber; means for performing a SOG/anti-reflective material curing process within the processing chamber, means for performing a cleaning process within the processing chamber and means for venting the processing chamber.
Claims27
A method of treating a substrate comprising a SOG/anti-reflective material layer formed on a low-k dielectric material layer formed on a semiconductor material layer, the method comprising the steps of:
- patterning the SOG/anti-reflective material layer;
- patterning the low-k dielectric layer;
- and
- treating the SOG/anti-reflective material with a curing solution.
A method of cleaning a microelectronic device, comprising the steps of:
- providing a substrate having a patterned SOG/anti-reflective material layer;
- performing a process to cure the patterned SOG/anti-reflective material;
- and
- performing a cleaning process to remove the cured patterned SOG/anti-reflective material.
A method of cleaning a microelectronic device, comprising the steps of:
- positioning a substrate having a patterned SOG/anti-reflective material layer in a process chamber;
- providing a curing solution to the process chamber;
- curing the patterned SOG/anti-reflective material with the curing solution;
- removing the curing solution from the process chamber;
- providing a cleaning fluid to the process chamber;
- and
- removing the cured the SOG/anti-reflective material with the cleaning fluid.
A method of fabricating an microelectronic device, comprising the steps of:
- forming an interlayer insulation film comprising a low-k dielectric material on a semiconductor substrate;
- forming a SOG/anti-reflective material on the interlayer insulation film;
- forming a photoresist on the SOG/anti-reflective material;
- patterning the photoresist;
- patterning the SOG/anti-reflective material and the interlayer insulation film using the photoresist as a mask;
- removing the photoresist;
- curing the patterned SOG/anti-reflective material using a curing solution;
- and
- cleaning the low-k dielectric material by removing the cured patterned SOG/anti-reflective material.
An apparatus for cleaning a microelectronic device comprising:
- a processing chamber including a substrate holder;
- means for pressurizing the processing chamber;
- means for performing a SOG/anti-reflective material curing process within the processing chamber;
- means for performing a cleaning process within the processing chamber;
- and
- means for venting the processing chamber.
Dependencies are inferred from the claim text.