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US 2006/0223311 A1Published application
Technique for forming interconnect structures with reduced electro and stress migration and/or resistivity
OwnerWolfgang Buchholtz, Petra Hetzer +1inventors
InventorsWolfgang Buchholtz, Petra Hetzer, Elvira Buchholtz
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Abstract
By improving the purity of metal lines and the crystalline structure, the overall performance of metal lines, especially of highly scaled copper-based semiconductor devices may be enhanced. The modification of the crystalline structure of the metal lines may be performed by a heat treatment generating locally restricted heating zones, which are scanned along the length direction of the metal lines.
Claims30
A method, comprising:
- forming a metal line in a dielectric layer of a metallization layer of a semiconductor device, said metal line extending along a length direction;
- and
- performing a heat treatment to vary a temperature along said length direction in a timely sequential manner.
A method, comprising:
- forming a metal line in a dielectric layer formed above a substrate comprising a semiconductor device;
- performing a heat treatment to modify a crystalline structure of said metal line;
- and
- exposing said metal line to a sub-atmospheric ambient to promote out-gassing of contaminants in said metal line.
1 more element
Dependencies are inferred from the claim text.