Method for forming a barrier/seed layer for copper metallization
AssigneeTokyo Electron Limited
InventorKenji Suzuki
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Abstract
A method for improving adhesion of Cu to a Ru layer in Cu metallization. The method includes providing a substrate in a process chamber of a deposition system, depositing a Ru layer on the substrate in a chemical vapor deposition process, and forming a Cu seed layer on the Ru layer to prevent oxidation of the Ru layer. The Cu seed layer is partially or completely oxidized prior to performing a Cu bulk plating process on the substrate. The oxidized portion of the Cu seed layer is substantially dissolved and removed from the substrate during interaction with a Cu plating solution, thereby forming a bulk Cu layer with good adhesion to the underlying Ru layer.
Claims18
A method for forming Cu metallization with a barrier/seed layer, the method comprising:
- providing a substrate in a process chamber of a deposition system;
- depositing a Ru layer on the substrate in a chemical vapor deposition process;
- forming a Cu seed layer on the Ru layer to prevent oxidation of the Ru layer;
- oxidizing at least a portion of the Cu seed layer;
- and
- plating a bulk Cu layer onto the substrate, wherein the plating substantially removes the oxidized portion of the Cu seed layer.
Dependencies are inferred from the claim text.