Apparatus for manufacturing a semiconductor device and method of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsYoung-Sub You, Jae-Woong Kim
Life of this patent
Estimating the term…
Abstract
An apparatus for manufacturing a semiconductor includes a polyhedral transfer chamber, a first process module for forming a gate dielectric layer by ALD, and a second process module for thermally treating the gate dielectric layer. The first process module is in communication with a first side of the transfer chamber. The second process module in communication with a second side of the transfer chamber. The apparatus further includes at least one load-lock chamber in communication with a third side of the transfer chamber.
Claims10
A method for forming a gate electrode comprising:
- loading a substrate into a clustered apparatus;
- forming a gate dielectric layer on the substrate using an ALD method in the clustered apparatus;
- thermally treating the substrate having the gate dielectric layer formed thereon to densify the gate dielectric layer in the clustered apparatus;
- and
- forming a first gate electrode on the thermally treated gate oxide layer in the clustered apparatus.
A method for forming a contact electrode comprising:
- loading a substrate having a lower structure into a single-substrate type clustered apparatus;
- removing a native oxide layer formed on the substrate;
- and
- forming a contact electrode on the substrate.
Dependencies are inferred from the claim text.