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US 2006/0223306 A1Published application
Method for forming film, method for manufacturing semiconductor device, semiconductor device and substrate treatment system
AssigneeTokyo Electron Limited
InventorsKohei Kawamura, Yasuo Kobayashi, Kenichi Nishizawa, Yasuhiro Terai, Akira Asano
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Abstract
A film forming method comprise the steps of forming a F-doped carbon film by using a source gas containing C and F, and modifying the F-doped carbon film by radicals, the source gas having a F/C ratio, defined as a ratio of a number of F atoms to a number of C atoms in the source gas molecule, wherein the F/C ratio is larger than 1 but smaller than 2.
Claims17
A film forming method, comprising the steps of:
- forming a F-doped carbon film by using a source gas containing C and F;
- and
- modifying said F-doped carbon film by radicals,
- said source gas having a F/C ratio, defined as a ratio of a number of F atoms to a number of C atoms in said source gas molecule, wherein said F/C ratio is larger than 1 but smaller than 2.
1 more element
A method of fabricating a semiconductor device, comprising the steps of:
- depositing a F-doped carbon film on a substrate by a plasma CVD process that uses a source gas that contains C and F in a molecule thereof;
- forming an opening in said F-doped carbon film by a dry etching process of said F-doped carbon film;
- and
- covering a sidewall surface and a bottom surface of said opening by a metal film,
- wherein there is provided, after said step of forming said opening but before said step of covering said sidewall surface and bottom surface of said opening by said metal film, a step of modifying at least said sidewall surface of said opening by radicals,
- said source gas having a CF ratio, defined as a ratio of a number of F atoms to a number of C atoms in said source gas molecule, wherein said F/C ratio is larger than 1 but smaller than 2.
3 more elements
A substrate processing system, comprising:
- a vacuum transfer chamber;
- a first processing chamber coupled to said vacuum transfer chamber for conducing a dry etching of a fluorine-doped carbon film;
- a second processing chamber coupled to said vacuum transfer chamber for modifying a fluorine-doped carbon film;
- a third processing chamber coupled to said vacuum transfer chamber for conducting dry cleaning of a fluorine-doped carbon film;
- and
- a fourth processing chamber coupled to said vacuum transfer chamber for conducting deposition of a metal film,
- wherein each of said first and second processing chambers comprises:
- a processing vessel coupled to an evacuation system and having a stage for holding a substrate to be processed;
- a microwave window provided so as to face said substrate to be processed on said stage and constituting a part of an outer wall of said processing vessel;
- a planar microwave antenna provided outside said processing vessel in coupling to said microwave window;
- a first gas supply system for supplying a noble gas to an interior of said processing vessel;
- and
- a second gas supply system provided in said processing vessel so as to divide a space inside said processing vessel into a first space part in which said microwave window is included and a second space part in which said stage is included, said second gas supply system being formed with an opening enabling invasion of plasma formed in said first space part into said second space part.
10 more elements
A method of fabricating a semiconductor device, comprising the steps of:
- depositing a fluorine-doped carbon film on a substrate by a plasma CVD process that uses a source gas that contains C and F in a molecule thereof;
- forming an opening in said fluorine-doped carbon film by a dry etching process;
- and
- depositing a first metal film so as to cover a sidewall surface and a bottom surface of said opening,
- wherein there is provided, after said step of forming said opening but before said step of depositing said first metal film, a step of depositing a second metal film that forms a stable compound when reacted with F, such that said second metal film covers at least said sidewall surface and bottom surface of said opening.
2 more elements
A semiconductor device, comprising:
- a substrate;
- a fluorine-doped carbon film formed over said substrate;
- an opening formed in said fluorine-doped carbon film;
- a first metal film formed so as to cover at least a sidewall surface and a bottom surface of of said opening,
- wherein there is formed, between said fluorine-doped carbon film and said first metal film, a second metal film so as to cover said sidewall surface and bottom surface of said opening, there being formed a fluoride film in said second metal film along an interface to said sidewall of said opening where said fluorine-doped carbon film is exposed.
2 more elements
Dependencies are inferred from the claim text.