Nickel silicide including indium and a method of manufacture therefor
AssigneeTexas Instruments Incorporated
InventorsPeijun Chen, Duofeng Yue, Amitabh Jain, Sue Crank, Thomas Bonifield, Homi Mogul
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Abstract
The present invention provides a semiconductor device, a method of manufacture therefore and a method for manufacturing an integrated circuit including the same. The semiconductor device, among other elements, may include a substrate (110), as well as a nickel silicide region (170) located over the substrate (110), the nickel silicide region (170) having an amount of indium located therein.
Claims22
A semiconductor device, comprising:
- a substrate;
- and
- a nickel silicide region located over the substrate, the nickel silicide region having an amount of indium located therein.
A method for manufacturing a semiconductor device, comprising:
- placing an indium region in a silicidable substrate;
- and
- forming a nickel silicide region in at least a portion of the indium region, the nickel silicided region having a reduced number of defects therein as a result of the inclusion of indium within the silicidable substrate prior to the forming the nickel silicided region.
A method for manufacturing an integrated circuit, comprising:
- forming semiconductor devices over a substrate, including;
- forming gate structures over the substrate, each of the gate structures including a gate dielectric layer and a gate electrode layer;
- forming source/drain regions in the substrate proximate the gate structures;
- placing indium regions in the source/drain regions;
- and
- forming nickel silicide regions in at least a portion of each of the indium regions, the nickel silicided region having a reduced number of defects therein as a result of the inclusion of indium within the silicidable substrate prior to the forming the nickel silicided region;
- and
- forming interconnects within dielectric layers located over the substrate for electrically contacting the semiconductor devices.
Dependencies are inferred from the claim text.