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US 2006/0223292 A1Published application
Method of manufacturing semiconductor device
AssigneeElpida Memory, Inc.
InventorsKensuke Okonogi, Kiyonori Oyu
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Abstract
In a method of manufacturing a semiconductor device with a MOS transistor, a channel impurity doped layer of a first conductive type is formed in a silicon substrate. First material is implanted into regions for diffusion layers of a second conductive type as sources/drains of the MOS transistor in the channel impurity doped layer. Heat treatment is carried out after the implanting process of the first material. Then, the diffusion layers are formed in the silicon substrate after the carrying out heat treatment.
Claims10
A method of manufacturing a semiconductor device with a MOS transistor, comprising:
- forming a channel impurity doped layer of a first conductive type in a silicon substrate;
- implanting first material into regions for diffusion layers of a second conductive type as sources/drains of said MOS transistor in said channel impurity doped layer;
- carrying out heat treatment after said implanting process of said first material;
- and
- forming said diffusion layers in said silicon substrate after said carrying out heat treatment.
2 more elements
Dependencies are inferred from the claim text.