Method of manufacturing semiconductor device and semiconductor device
AssigneeSeiko Epson Corporation
InventorHiroyuki Shimada
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes implanting an impurity into a crystalline semiconductor film that is formed over a base and includes a first part in contact with the base, a second part and a third part, so that at least the second part and the third part are doped with the impurity while the first part is prevented from being doped with the impurity, and forming a source and a drain in the second part and the third part, respectively. The implanting includes depositing a material of the crystalline semiconductor film over the base. The forming includes heating at least the second part and the third part.
Claims10
A method of manufacturing a semiconductor device, comprising:
- implanting an impurity into a crystalline semiconductor film that is formed over a base and that includes a first part in contact with the base, a second part and a third part, the impurity being implanted so that at least the second part and the third part are doped with the impurity while the first part is prevented from being doped with the impurity;
- forming a source and a drain in the second part and the third part, respectively;
- the implanting including depositing a material of the crystalline semiconductor film over the base;
- and
- the forming including heating at least the second part and the third part.
A method of manufacturing a semiconductor device, comprising:
- implanting an impurity into a crystalline semiconductor film that is formed over a base and that includes a first, second and third part, the impurity being implanted so that at least the second part and the third part are doped with the impurity while the first part is prevented from being doped with the impurity;
- and
- forming a source and a drain in the second part and the third part, respectively, the forming including heat treatment for at least the second part and the third part to enhance the crystallinity of the second part and the third part.
A method of manufacturing a semiconductor device, comprising:
- implanting an impurity into a crystalline semiconductor film that is formed over a base and that includes a first part, a second part and a third part, the impurity being implanted so that at least the second part and the third part are doped with the impurity while the first part is prevented from being doped with the impurity;
- and
- forming a source and a drain in the second part and the third part, respectively, the forming including heat treatment for at least the second part and the third part to induce solid phase epitaxy in the second part and the third part by using at least a portion of the first part as a seed.
A semiconductor device including a transistor over a base, comprising:
- a crystalline semiconductor layer formed over the base by a deposition method;
- and
- a source and a drain formed in the crystalline semiconductor layer through activation of an impurity by solid phase epitaxy using part of the crystalline semiconductor layer near the base as a seed layer.
Dependencies are inferred from the claim text.