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US 2006/0223288 A1Published application
Group-III nitride semiconductor stack, method of manufacturing the same, and group-III nitride semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsHideto Sugawara, Tsunenori Hiratsuka
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Abstract
A group-III nitride semiconductor stack comprises a single-crystal substrate, a first group-III nitride layer formed on a principal surface of the single-crystal substrate, a graded low-temperature deposited layer formed on the group-III nitride layer and made of nitride in which group-III element composition is continuously changed, and a second group-III nitride layer formed on the graded low-temperature deposited layer.
Claims9
1-8. (canceled)
A method of manufacturing a group-III nitride semiconductor stack, comprising:
- forming a first group-III nitride layer on a principal 25 surface of a single-crystal substrate;
- forming a graded low-temperature deposited layer in which group-III element composition is continuously changed, on the first group-III nitride layer without growth interruption;
- and
- forming a second group-III nitride layer on the graded low-temperature deposited layer without growth interruption.
1 more element
16-20. (canceled)
Dependencies are inferred from the claim text.