Method of forming a low temperature-grown buffer layer, light emitting element, method of making same, and light emitting device

A method of forming a low temperature-grown buffer layer, comprising the steps of:

• acid-cleaning a Ga2O3 substrate;
• placing the acid-cleaned Ga2O3 substrate in a MOCVD apparatus;
• providing a H2 atmosphere in the MOCVD apparatus and setting a buffer layer growth condition comprising an atmosphere temperature of 350° C. to 550° C.;
• and
• supplying a source gas comprising two or more of TMG, TMA and NH3 onto the Ga2O3 substrate in the buffer layer growth condition to form the low temperature-grown buffer layer on the Ga2O3 substrate.

A method of forming a low temperature-grown buffer layer, comprising the steps of:

• nitriding a Ga2O3 substrate;
• placing the nitrided Ga2O3 substrate in a MOCVD apparatus;
• providing a H2 atmosphere in the MOCVD apparatus and setting a buffer layer growth condition comprising an atmosphere temperature of 350° C. to 550° C.;
• and
• supplying a source gas comprising two or more of TMG, TMA and NH3 onto the Ga2O3 substrate in the buffer layer growth condition to form the low temperature-grown buffer layer on the Ga2O3 substrate.

A method of forming a low temperature-grown buffer layer, comprising the steps of:

• acid-cleaning a Ga2O3 substrate;
• nitriding the acid-cleaned Ga2O3 substrate;
• placing the nitrided Ga2O3 substrate in a MOCVD apparatus;
• providing a H2 atmosphere in the MOCVD apparatus and setting a buffer layer growth condition comprising an atmosphere temperature of 350° C. to 550° C.;
• and
• supplying a source gas comprising two or more of TMG, TMA and NH3 onto the Ga2O3 substrate in the buffer layer growth condition to form the low temperature-grown buffer layer on the Ga2O3 substrate.

A method of making a light emitting element, comprising the steps of:

• acid-cleaning a Ga2O3 substrate;
• nitriding the acid-cleaned Ga2O3 substrate;
• placing the nitrided Ga2O3 substrate in a MOCVD apparatus;
• providing a H2 atmosphere in the MOCVD apparatus and setting a buffer layer growth condition comprising an atmosphere temperature of 350° C. to 550° C.;
• supplying a source gas comprising two or more of TMG, TMA and NH3 onto the Ga2O3 substrate in the buffer layer growth condition to form the low temperature-grown buffer layer on the Ga2O3 substrate;
• forming a first GaN layer on the low temperature-grown buffer layer while providing a N2 atmosphere in the MOCVD apparatus;
• and
• forming a second GaN layer on the first GaN layer while providing a H2 atmosphere in the MOCVD apparatus.

A light emitting element, comprising:

• a conductive first layer comprising gallium oxides;
• a second layer comprising AlxGa1-xN (0≦x≦1) formed under a growth condition to prevent a thermal decomposition of the first layer;
• and
• a third layer comprising a GaN-based semiconductor formed on the second layer.

A light emitting device, comprising:

• a light emitting element comprising a conductive first layer comprising gallium oxides, a second layer comprising AlxGa1-xN (0≦x≦1) formed under a growth condition to prevent a thermal decomposition of the first layer, and a third layer comprising a GaN-based semiconductor formed on the second layer;
• an element mounting portion on which the light emitting element is mounted;
• and
• a sealing portion that seals the light emitting element and the element mounting portion.