Method for manufacturing semiconductor device and semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorKenji Ueda
Life of this patent
Estimating the term…
Abstract
In the present invention, trenches are formed on a principal surface of a silicon substrate; a first insulating film is formed on an entire surface of the silicon substrate including trenches so as not to bury the trenches; a second insulating film burying the trenches and covering the principal surface of the silicon substrate is formed; and planarization is performed by polishing a surface of the second insulating film until the first insulating film formed on the principal surface of the silicon substrate is exposed. Here, as the first insulating film, a silicon oxide film whose surface or a portion in vicinity to the surface is silicon-rich is formed and as the second insulating film, a silicon oxide film is formed.
Claims10
A method for manufacturing a semiconductor device, comprising steps of:
- forming trenches on a principal surface of a semiconductor substrate;
- forming a first insulating film on an entire surface of the semiconductor substrate including the trenches so as not to bury the trenches;
- forming a second insulating film, burying the trenches and covering the principal surface of the semiconductor substrate, on the first insulating film;
- and
- planarizing a surface of the second insulating film by polishing a surface of the second insulating film until the first insulating film formed on the principal surface of the semiconductor substrate is exposed, wherein
- the step of forming the first insulating film forms a silicon oxide film whose surface or a portion in vicinity to the surface is silicon-rich, and
- the step of forming the second insulating film forms a silicon oxide film.
A semiconductor device comprising:
- a semiconductor substrate;
- a plurality of elements formed on a principal surface of the semiconductor substrate;
- trenches, for element-isolating adjacent elements respectively, formed on the principal surface of the semiconductor substrate;
- and
- element isolation portions formed by burying an insulating film in the trenches, wherein
- the insulating film comprises a silicon oxide film, as a first insulating film, whose surface or a portion in vicinity to the surface is silicon-rich and is formed so as not to bury the trenches and a silicon oxide film, as a second insulating film, formed so as to bury the trenches and cover the principal surface of the semiconductor substrate.
Dependencies are inferred from the claim text.