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US 2006/0223262 A1Published application
Vertical memory device and method
AssigneeIntel Corporation
InventorsJun-Fei Zheng, Pranav Kalavade
Life of this patent
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Abstract
Method and apparatus are described for a memory cell includes a substrate, a body extending vertically from the substrate, a first gate having a vertical member and a horizontal member and a second gate comprising a vertical member and a horizontal member. The first gate is disposed laterally from the body and the second gate is disposed laterally from the first gate. The horizontal member of the first gate overlaps the horizontal member of the second gate.
Claims26
A memory cell, comprising:
- a substrate;
- a body extending vertically from said substrate;
- a first gate comprising a vertical member and a horizontal member, wherein said first gate is disposed laterally from said body;
- and
- a second gate comprising a vertical member and a horizontal member, wherein said second gate is disposed laterally from said first gate;
- wherein said horizontal member of said first gate overlaps said horizontal member of said second gate.
3 more elements
A memory array, comprising:
- multiple memory cells, wherein each of said cells comprises a substrate;
- a body extending vertically from said substrate, a source, and a drain;
- a first gate comprising a vertical member and a horizontal member, wherein said first gate is disposed laterally from said body;
- and a second gate comprising a vertical member and a horizontal member, wherein said second gate is disposed laterally from said first gate;
- wherein said horizontal member of said first gate overlaps said horizontal member of said second gate;
- multiple gate lines interconnecting said second gates of each of said memory cells;
- multiple drain lines interconnecting said drains of each of said memory cells;
- and
- multiple source lines interconnecting said sources of each of said memory cells.
6 more elements
A method of making a memory cell, comprising:
- forming a body on a substrate, said body extending vertically from said substrate;
- forming a first gate comprising a vertical member and a horizontal member, wherein said first gate is disposed laterally from said body;
- and
- forming a second gate comprising a vertical member and a horizontal member, wherein said second gate is disposed laterally from said first gate;
- wherein said horizontal member of said first gate overlaps said horizontal member of said second gate.
2 more elements
An apparatus, comprising:
- a random access memory comprising multiple memory cells;
- wherein each of said memory cells comprises:
- a substrate;
- a body extending vertically from said substrate;
- a first gate comprising a vertical member and a horizontal member, wherein said first gate is disposed laterally from said body;
- and
- a second gate comprising a vertical member and a horizontal member, wherein said second gate is disposed laterally from said first gate;
- wherein said horizontal member of said first gate overlaps said horizontal member of said second gate.
5 more elements
Dependencies are inferred from the claim text.