Semiconductor device multilayer structure, fabrication method for the same, semiconductor device having the same, and semiconductor device fabrication method
AssigneeSamsung Electronics Co., Ltd.
InventorsJae-Hwa Park, Hee-Sook Park, Dae-Yong Kim, Jang-Hee Lee
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Abstract
In one embodiment, a semiconductor device comprises a semiconductor substrate and a doped conductive layer formed over the semiconductor substrate. A diffusion barrier layer is formed over the doped conductive layer. The diffusion barrier layer comprises an amorphous semiconductor material. An ohmic contact layer is formed over the diffusion barrier layer. A metal barrier layer is formed over the ohmic contact layer. A metal layer is formed over the metal barrier layer.
Claims40
A semiconductor device, comprising:
- a semiconductor substrate;
- a doped conductive layer over the semiconductor substrate;
- a diffusion barrier layer on the doped conductive layer, the diffusion barrier layer comprising an amorphous semiconductor material;
- an ohmic contact layer on the diffusion barrier layer;
- a metal barrier layer on the ohmic contact layer;
- and
- a metal layer on the metal barrier layer.
The semiconductor device of claim 5, wherein the refractory metal silicide comprises W and Si.
A semiconductor device, comprising:
- a semiconductor substrate;
- a doped conductive layer on the semiconductor substrate;
- a diffusion barrier layer on the doped conductive layer, the diffusion barrier layer comprising a plurality of conductive particles dispersed therein;
- a metal barrier layer on the diffusion barrier layer;
- and
- a metal layer on the metal barrier layer.
A semiconductor device comprising:
- a semiconductor substrate having a first well region of a first conductivity-type and a second well region of a second-conductivity type;
- an insulated gate electrode pattern on the first well region,
- a source region and a drain region of a second-conductivity type formed adjacent opposite sides of the gate electrode pattern,
- wherein the insulated gate electrode pattern comprises:
- a gate insulating layer on the semiconductor substrate;
- a doped conductive layer on the gate insulating layer;
- a diffusion barrier layer on the doped conductive layer, the diffusion barrier layer comprising an amorphous semiconductor material;
- an ohmic contact layer on the diffusion barrier layer;
- a metal barrier layer on the ohmic contact layer;
- and
- a metal layer on the metal barrier layer.
A semiconductor device comprising:
- a semiconductor substrate, the semiconductor substrate having a first well region of a first-conductivity type and a second well region of a second-conductivity type;
- an insulated gate electrode pattern on the first well region,
- a source region and a drain region of a second-conductivity type formed adjacent opposite sides of the first gate pattern,
- wherein the gate pattern comprising:
- a gate insulating layer on the semiconductor substrate;
- a doped conductive layer on the gate insulating layer;
- a diffusion barrier layer on at least a portion of the doped conductive layer, the diffusion barrier layer having a plurality of conductive particles dispersed therein;
- a metal barrier layer on the diffusion barrier layer;
- and
- a metal layer on the metal barrier layer.
A method of fabricating a semiconductor device comprising:
- forming a gate insulating layer;
- forming a doped conductive layer on the gate insulating layer;
- forming a diffusion barrier layer on the doped conductive layer, the diffusion barrier layer comprising an undoped semiconductor material;
- forming an ohmic contact layer on the diffusion barrier layer;
- forming a metal barrier layer on the ohmic contact layer;
- and
- forming a metal layer on the metal barrier layer.
A semiconductor device formed by a process comprising:
- forming a gate insulating layer;
- forming a doped conductive layer on the first insulating layer;
- forming a diffusion barrier layer on the doped conductive layer, the diffusion barrier layer comprising an undoped semiconductor material;
- forming an ohmic contact layer on the diffusion barrier layer;
- forming a metal barrier layer on the ohmic contact layer;
- and
- forming a metal layer on the metal barrier layer.
Dependencies are inferred from the claim text.