Semiconductor-device manufacturing method
AssigneeFujitsu Limited
InventorsSatoshi Terayama, Hirohisa Matsuki
Life of this patent
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Abstract
In a manufacturing method of a semiconductor device, a semiconductor substrate having a plurality of semiconductor chips formed on one of principal surfaces of the substrate is cut into the plurality of semiconductor chips through dicing. A first cutting process is formed on one of the principal surfaces of the substrate to produce two cutting grooves between two neighboring ones of the plurality of semiconductor chips, each cutting groove being adjacent to one of the neighboring ones of the plurality of semiconductor chips. A second cutting process is performed on the other of the principal surfaces of the substrate to produce a cutting groove overlapping the two cutting grooves produced by the first cutting process.
Claims12
A manufacturing method of a semiconductor device in which a semiconductor substrate having a plurality of semiconductor chips formed on one of principal surfaces of the substrate is cut into the plurality of semiconductor chips through dicing, comprising the steps of:
- performing a first cutting process on one of the principal surfaces of the substrate to produce two cutting grooves between two neighboring ones of the plurality of semiconductor chips, each cutting groove being adjacent to one of the neighboring ones of the plurality of semiconductor chips;
- and
- performing a second cutting process on the other of the principal surfaces of the substrate to produce a cutting groove overlapping the two cutting grooves produced by the first cutting process.
Dependencies are inferred from the claim text.