Semiconductor package substrate having contact pad protective layer formed thereon and method for fabricating the same

A fabrication method for a semiconductor package substrate having a contact pad protective layer formed thereon, the method comprising the steps of:

• providing an insulating layer having a plurality of blind vias formed therein for exposing inner traces disposed underneath the insulating layer;
• forming a conductive film on the insulating layer and over the blind vias;
• forming a first resist layer on the conductive film, wherein the first resist layer has a plurality of openings to expose predetermined parts of the conductive film;
• performing a first electroplating process to form a patterned trace layer in the openings and in the blind vias to form conductive vias, wherein the patterned trace layer comprises a plurality of contact pads, and at least one of the contact pads is electrically connected to at least one of the conductive vias;
• forming a second resist layer over the patterned trace layer exclusive of the contact pads, making the contact pads exposed from the second resist layer;
• performing a second electroplating process to form a metal barrier layer on the contact pads;
• and
• removing the second resist layer, the first resist layer, and parts of the conductive film covered by the first resist layer.

A fabrication method for a semiconductor package substrate having a contact pad protective layer formed thereon, comprising the steps of:

• providing an insulating layer having a plurality of blind vias formed therein for exposing inner traces disposed underneath the insulating layer;
• forming a conductive film on the insulating layer and over the blind vias;
• forming a resist layer on the conductive film, the resist layer having a plurality of openings to expose predetermined parts of the conductive film;
• performing a first electroplating process to form a plurality of contact pads in the openings and form a plurality of conductive vias in the blind vias, wherein at least one of the contact pads is electrically connected to at least one of the conductive vias;
• performing a second electroplating process to form a metal barrier layer on the contact pads;
• and
• removing the resist layer and parts of the conductive film covered by the resist layer.