Method of depositing polythiophene semiconductor on a substrate
AssigneeSeiko Epson Corporation
InventorsChristopher Newsome, Shunpu Li, Thomas Kugler, David Russell
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Abstract
Provided is a method of depositing a polythiophene semiconductor on a substrate. First, the semiconductor is dissolved in a solvent comprising a halogen-containing aromatic compound. Then, the resulting solution is ink-jet printed onto the substrate. The method is useful in the production of microelectronic components such as thin film transistor devices.
Claims11
A method of depositing a polythiophene semiconductor on a substrate comprising the steps of:
- (i) dissolving the semiconductor in a solvent comprising a halogen-containing aromatic compound;
- and
- (ii) ink-jet printing the resulting solution onto the substrate.
A method of depositing a polythiophene semiconductor on a substrate comprising dissolving the polymer in a solvent substantially as described herein with reference to any of the Examples 1-9 and ink-jet printing the resulting solution.
Dependencies are inferred from the claim text.