Field effect transistor arrangement and method of manufacturing a field effect transistor arrangement
AssigneeKoninklijke Philips Electronics N.V.
InventorsHjalmar Huitema, Bart-Hendrik Huisman
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Abstract
Provided is a method of manufacturing a field effect transistor with an organic semiconductor, and particularly a device comprising a plurality of field effect transistors with an interconnect structure. Herein, use is made of three photolithographical masks for four layers. Thereto, the transistor is provided in a top-gate structure, and the organic semiconductor layer (307) and the dielectric layer (309) are structure and patterned together. The semiconductor layer (307) and the dielectric layer (309) may be removed from areas not associated with field effect transistors (300) or with crossing conductors of the first and second conductor layer (303, 305, 501).
Claims10
A method of manufacturing an electronic device, in which method at least one field effect transistor is provided on a substrate, which provision of the at least one field effect transistor comprises the steps of:
- applying a patterned first conductor layer on the substrate
- applying an organic semiconductor layer on the first conductor layer,
- applying a dielectric layer on the semiconductor layer;
- patterning the organic semiconductor layer and the dielectric layer together;
- and
- applying a patterned second conductor layer on the patterned dielectric layer.
An electronic device comprising a plurality of field effect transistor on a substrate and an interconnect structure so as to connect the transistors mutually and/or to an output terminal, the field effect transistors and at least part of the interconnect structure being provided in a stack of:
- a patterned first conductor layer applied on the substrate;
- an organic semiconductor layer applied on the first conductor layer;
- a dielectric layer applied on the semiconductor layer;
- a patterned second conductor layer applied on the dielectric layer
- wherein the semiconductor layer and the dielectric layer are provided in a substantially identical pattern.
Dependencies are inferred from the claim text.