Method for Making a Microelectromechanical Systems (MEMS) Device Including a Superlattice
AssigneeRJ Mears, LLC
InventorRichard Blanchard
Life of this patent
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Abstract
A method for making a microelectromechanical system (MEMS) device may include providing a substrate, and forming at least one movable member supported by the substrate. The at least one movable member may include a superlattice including a plurality of stacked groups of layers with each group of layers of the superlattice comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
Claims23
A method for making a microelectromechanical system (MEMS) device comprising:
- providing a substrate;
- and
- forming at least one movable member supported by the substrate and comprising a superlattice including a plurality of stacked groups of layers with each group of layers of the superlattice comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
A method for making a microelectromechanical system (MEMS) device comprising:
- providing a substrate;
- forming at least one movable member supported by the substrate;
- forming a first electrically conductive contact carried by the at least one movable member;
- forming a second electrically conductive contact carried by the substrate and aligned with the first electrically conductive contact;
- and
- providing a driver carried by the substrate for driving the at least one movable member;
- the at least one movable member comprising a superlattice including a plurality of stacked groups of layers with each group of layers of the superlattice comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
Dependencies are inferred from the claim text.