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AssigneeSTMicroelectronics S.r.l.
InventorsPeter Rieve, Konstantin Seibel, Michael Wagner, Jens Prima, Marcus Walder
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Optoelectronic component for converting electromagnetic radiation into an intensity-dependent photocurrent comprising a substrate formed in CMOS technology, in particular, with an integrated semiconductor structure (ASIC) and an optically active thin-film structure arranged upstream in the direction of light incidence and comprising in each case at least one layer made of doped and at least one layer made of undoped semiconductor material, which is connected to a microelectronic circuit arranged on the substrate by means of an insulating layer, within which are situated connecting means for contact-connecting the optically active thin-film structure to the semiconductor structure. The invention is based on the object of providing an optoelectronic component, and a method for fabricating it, which, on the one hand, can be fabricated more simply and, on the other hand, has a reduced dark current. This object is achieved according to the invention by virtue of the fact that the optically active thin-film structure has a layer sequence made of a metal and an intrinsically conducting amorphous or microcrystalline semiconductor material, in particular silicon and alloys thereof, which is applied directly to the planarized insulating layer.
A method for fabricating an optoelectronic component for converting electromagnetic radiation into an intensity-dependent photocurrent comprising a substrate formed in CMOS technology, with an integrated semiconductor structure and an optically active thin-film structure arranged upstream in the direction of light incidence and comprising at least one layer made of doped and at least one layer made of undoped semiconductor material, which is connected to a microelectronic circuit arranged on the substrate by means of an insulating layer, within which are situated connecting means for contact-connecting the optically active thin-film structure to the semiconductor structure, wherein the optically active thin-film structure is applied to the planarized insulating layer, wherein the thin-film structure has a layer sequence made of a plurality of metal electrodes and an intrinsically conducting layer that contacts the plurality of metal electrodes, made of amorphous or microcrystalline semiconductor material, such as silicon or alloys thereof, and further comprising an extrinsically conducting layer that contacts the intrinsically conducting layer and a conductive transparent layer disposed on the layer sequence.
A method of forming an optoelectronic component, the method comprising:
Dependencies are inferred from the claim text.