Surface-emission semiconductor laser device
AssigneeFurukawa Electric Co., Ltd.
InventorsNoriyuki Yokouchi, Norihiro Iwai
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Abstract
A method for fabricating a surface-emission semiconductor laser on a p-type substrate includes the step of interposing an Au film between an AuGeNi film or AuGe film of an n-side electrode and a compound semiconductor layer of an n-type DBR, followed by annealing to form an Au alloy in the n-side electrode. The presence of the Au alloy film improves the adherence between the n-side electrode and the compound semiconductor layer to improve an injection current vs. applied voltage characteristic.
Claims12
A method for fabricating a surface-emission semiconductor laser device comprising the steps of:
- consecutively forming on a p-type substrate a bottom multilayer reflector, a p-type cladding layer, an active layer structure for emitting laser, an n-type cladding layer and a top multilayer reflector;
- and forming an n-side electrode on the n-type cladding layer, the n-side electrode forming step including forming a substantially uniform Au film on the n-type cladding layer, followed by forming an AuGeNi film or AuGe film on the Au film, and lastly forming an alloy between the Au film and the AuGeNi film or AuGe film.
A method for fabricating a surface-emission semiconductor laser device comprising the steps of:
- consecutively forming on a p-type substrate a bottom multilayer reflector, a p-type cladding layer, an active layer structure for emitting laser, an n-type cladding layer and a top multilayer reflector;
- forming a p-side electrode on the p-type cladding layer or the bottom multilayer reflector;
- and forming an n-side electrode on the n-type cladding layer or the top multilayer reflector, the n-side electrode forming step including forming a substantially uniform Au film on the n-type cladding layer, followed by forming an AuGeNi film or AuGe film on the Au film, and lastly forming an alloy between the Au film and the AuGeNi film or AuGe film.
A method for fabricating a surface-emission semiconductor laser device comprising the steps of:
- consecutively forming on a semiconductor substrate a bottom multilayer reflector, an n-type cladding layer, an active layer structure for emitting laser, a p-type cladding layer and a top multilayer reflector;
- forming an n-side electrode on the n-type cladding layer or the bottom multilayer reflector;
- and forming a p-side electrode on the p-type cladding layer or the top multilayer reflector, the n-side electrode forming step including forming a substantially uniform Au film on the n-type cladding layer, followed by forming an AuGeNi film or AuGe film on the Au film, and lastly forming an alloy between the Au film and the AuGeNi film or AuGe film.
Dependencies are inferred from the claim text.