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OwnerTsuyoshi Nakamura, Koki Tamura +4inventors
InventorsTsuyoshi Nakamura, Koki Tamura, Tomotaka Yamada, Taku Hirayama, Daisuke Kawana, Takayuki Hosono
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A silsesquioxane resin, a positive resist composition, a resist laminate, and a method of forming a resist pattern that are capable of suppressing a degas phenomenon are provided, and a silicon-containing resist composition and a method of forming a resist pattern that are ideally suited to immersion lithography are also provided. The silsesquioxane resin includes structural units represented by the general shown below [wherein, R1 and R2 each represent, independently, a straight chain, branched, or cyclic saturated aliphatic hydrocarbon group; R3 represents an acid dissociable, dissolution inhibiting group containing a hydrocarbon group that includes an aliphatic monocyclic or polycyclic group; R4 represents a hydrogen atom, or a straight chain, branched, or cyclic alkyl group; X represents an alkyl group of 1 to 8 carbon atoms in which at least one hydrogen atom has been substituted with a fluorine atom; and m represents an integer from 1 to 3].
A silsesquioxane resin comprising structural units represented by general formulas [1] and [2] shown below:
A positive resist composition used in a method of forming a resist pattern that comprises an immersion lithography step, wherein if a sensitivity when a 1:1 line and space resist pattern of 130 nm is formed by a normal exposure lithography process using a light source with a wavelength of 193 nm is termed X1, and a sensitivity when an identical 1:1 line and space resist pattern of 130 nm is formed by a simulated immersion lithography process, in which a step for bringing a solvent for said immersion lithography in contact with a resist film is inserted between a selective exposure step and a post exposure baking (PEB) step of a normal exposure lithography process, using a light source with a wavelength of 193 nm is termed X2, then said positive resist composition is a positive resist composition comprising a silsesquioxane resin as a resin component, for which an absolute value of [(X2/X1)−1]×100 is no more than 8.0.
Dependencies are inferred from the claim text.