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US 2006/0222864 A1Published application
Method of forming boron-doped and fluorine-doped organosilicate glass films
OwnerGeorge Antonelli, Mandayam Sriram +1inventors
InventorsGeorge Antonelli, Mandayam Sriram, Michael Goodner
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Abstract
An embodiment of the invention is a method of forming a low-k carbon doped oxide dielectric material with improved mechanical properties. An embodiment incorporates a precursor containing a fluorinated organic silane, an alkylborane, or an alkoxyborane with a low-k carbon doped oxide dielectric material precursor during chemical vapor deposition to accomplish the mechanical improvement
Claims18
A method comprising:
- providing a carbon-doped silicon oxide (CDO) precursor;
- providing a strengthening additive precursor;
- and
- forming, with chemical vapor deposition including the CDO precursor and the strengthening additive precursor, a strengthened CDO.
1 more element
A method comprising:
- providing a carbon-doped silicon oxide (CDO) precursor;
- providing one of a boron precursor, a fluorinated organic silane precursor, or a combination of boron and fluorinated organic silane precursors;
- and
- forming, with chemical vapor deposition including the CDO precursor and one of the boron precursor, the fluorinated organic silane precursor, or the combination of boron and fluorinated organic silane precursors, a strengthened CDO.
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An apparatus comprising:
- a carbon-doped oxide (CDO) including a strengthening additive wherein the strengthening additive is selected from the group consisting of boron, fluorine, a trifluoromethyl (CF3) group, a methyl (CH3) group, and a combination thereof.
Dependencies are inferred from the claim text.