Methods for the reduction and elimination of particulate contamination with cvd of amorphous carbon
OwnerMartin Seamons, Wendy Yeh +2inventors
InventorsMartin Seamons, Wendy Yeh, Sudha Rathi, Heraldo Botelho
Life of this patent
Estimating the term…
Abstract
A method is provided for forming an amorphous carbon layer, deposited on a dielectric material such as oxide, nitride, silicon carbide, carbon doped oxide, etc., or a metal layer such as tungsten, aluminum or poly-silicon. The method includes the use of chamber seasoning, variable thickness of seasoning film, wider spacing, variable process gas flows, post-deposition purge with inert gas, and post-deposition plasma purge, among others, to make the deposition of an amorphous carbon film at low deposition temperatures possible without any defects or particle contamination.
Claims10
A method for depositing an amorphous carbon material on a substrate in a chamber, comprising:
- depositing a first material for a first deposition time inside the chamber;
- positioning a substrate inside the chamber;
- providing a gas mixture by flowing one or more hydrocarbon compounds and an inert gas to the chamber;
- applying an electric field to the gas mixture and heating the gas mixture to decompose the one or more hydrocarbon compounds in the gas mixture and generate a plasma;
- and
- depositing the amorphous carbon material on the substrate for a second deposition time, thereby reducing particle contamination on the substrate.
A method for processing a substrate in a chamber, comprising:
- depositing a first amorphous carbon material for a first deposition time inside the chamber;
- positioning a substrate inside the chamber;
- providing a gas mixture by flowing one or more hydrocarbon compounds and an inert gas to the chamber;
- applying an electric field to the gas mixture and heating the gas mixture to decompose the one or more hydrocarbon compounds in the gas mixture and generate a plasma;
- depositing a second amorphous carbon material on the substrate for a second deposition time;
- and then
- terminating at least one gas flow of the one or more hydrocarbon compounds while still flowing the inert gas to the deposition chamber for a first time period, wherein any gas or plasma generated is pumped out of the chamber for a second time period, thereby reducing particle contamination on the substrate.
Dependencies are inferred from the claim text.