Group I-III-VI quaternary or higher alloy semiconductor films
AssigneeUniversity of Johannesburg
InventorVivian Alberts
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Abstract
This invention relates to group IB-IIIA. VIA quaternary or higher alloys. More particularly, this invention relations to group IB-IIIA-VIA quaternary or pentenary alloys which are suitable for use as semiconductor films. More specifically, the invention relates to quaternary or pentenary alloys which are substantially homogeneous and are characterized by an x-ray diffraction pattern (XRD) having a main [112] peak at a 2θ angle (2θ(112)) of from 26° to 28° for Cu radiation at 40 kV, wherein a glancing incidence x-ray diffraction pattern (GIXRD) for a glancing angle of from 0.2° to 100 reflects an absolute shift in the 2θ(112) angle of less than 0.06°.
Claims37
A quaternary or higher group IB-IIIA-VIA alloy having the general formula (I):
- A(B1-xCx)(D1-yEy)2 (I)
- wherein:
- A is a group IB element;
- B is a group IIIA element;
- C is a group IIIA element, which is different to B;
- D is a first group VIA element (hereinafter referred to as VIA1);
- E is a second group VIA element (hereinafter referred to as VIA2);
- and
- each of x and y independently are from 0 to 1, provided that both x and y are not zero at the same time;
- and the alloy being characterised by an x-ray diffraction pattern (XRD) having a main [112] peak at a 2θ angle (2θ(112)) of from 26° to 28° for Cu radiation at 40 kV, wherein a glancing incidence x ray diffraction pattern (GIXRD) for a glancing angle of from 0.2° to 10° reflects an absolute shift in the 2θ(112)angle of less than 0.06°.
Dependencies are inferred from the claim text.