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US 2006/0222037 A1Published application
Semiconductor laser diode
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorKenji Masuda
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Abstract
A semiconductor laser diode includes a semiconductor cladding layer of a first conductivity type, an active layer on the semiconductor cladding layer of the first conductivity type, a semiconductor cladding layer of a second conductivity type on the active layer, an insulating film on the semiconductor cladding layer of the second conductivity type, a metal electrode electrically connected to the semiconductor cladding layer of the second conductivity type, and an electric circuit element on the insulating film.
Claims8
A semiconductor laser diode comprising:
- a semiconductor cladding layer of a first conductivity type;
- an active layer formed on the semiconductor cladding layer of the first conductivity type;
- a semiconductor cladding layer of a second conductivity type formed on the active layer;
- an insulating film on the semiconductor cladding layer of the second conductivity type;
- a metal electrode electrically connected to the semiconductor cladding layer of the second conductivity type;
- and
- an electric circuit element on the insulating film.
4 more elements
Dependencies are inferred from the claim text.