Semiconductor laser device and method of fabricating the same
AssigneeSanyo Electric Co., Ltd.
InventorsTsutomu Yamaguchi, Masayuki Hata, Takashi Kano, Masayuki Shono, Hiroki Ohbo, Yasuhiko Nomura, Hiroaki Izu
Life of this patent
Estimating the term…
Abstract
A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.
Claims19
A semiconductor laser device comprising:
- a semiconductor substrate having a principal surface;
- a semiconductor element layer, formed on said principal surface of said semiconductor substrate, having a principal surface substantially inclined with respect to said principal surface of said semiconductor substrate and including an emission layer;
- and
- a growth inhibiting portion arranged on a prescribed region of said principal surface of said semiconductor substrate, wherein
- said growth inhibiting portion includes a defect concentration region.
A semiconductor laser device comprising:
- a semiconductor substrate having a principal surface;
- a semiconductor element layer, formed on said principal surface of said semiconductor substrate, having a principal surface substantially inclined with respect to said principal surface of said semiconductor substrate and including an emission layer;
- and
- a growth inhibiting portion arranged on a prescribed region of said principal surface of said semiconductor substrate, wherein
- the surface of said growth inhibiting portion is terminated with nitrogen.
A method of fabricating a semiconductor laser device, comprising steps of:
- preparing a semiconductor substrate provided with at least either a growth inhibiting portion including a defect concentration region or a growth promoting portion on a prescribed region of the principal surface;
- and
- growing a semiconductor element layer having a principal surface substantially inclined with respect to the principal surface of said semiconductor substrate and including an emission layer on the principal surface of said semiconductor substrate through at least either said growth inhibiting portion or said growth promoting portion.
Dependencies are inferred from the claim text.