Method for forming quantum dots by alternate growth process
AssigneeElectronics and Telecommunications Research Institute
InventorsJin Soo Kim, Jin Hong Lee, Sung Ui Hong, Byung Seok Choi, Ho Sang Kwack, Dae Kon Oh
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Abstract
Provided is a method of forming quantum dots, including: forming a buffer layer on an InP substrate so as to be lattice-matched with the InP substrate; and sequentially alternately depositing In(Ga)As layers and InAl(Ga)As or In(Ga, Al, As)P layers that are greatly lattice-mismatched with each other on the buffer layer so as to form In(Ga, Al)As or In(Ga, Al, P)As quantum dots.
Claims23
A method for forming quantum dots, comprising:
- forming a buffer layer on an InP substrate so as to be lattice-matched with the InP substrate;
- and
- sequentially alternately depositing In(Ga)As layers and InAl(Ga)As or In(Ga, Al, As)P layers that are greatly lattice-mismatched with each other on the buffer layer so as to form In(Ga, Al)As or In(Ga, Al, P)As quantum dots.
A method for forming quantum dots, comprising:
- forming a buffer layer on a InP substrate so as to be lattice-matched with the InP substrate;
- and
- sequentially alternately depositing In(Ga)As layers and InAl(Ga)As layers that are greatly lattice-mismatched with each other on the buffer layer so as to form In(Ga, Al)As quantum dots.
A method for forming quantum dots, comprising:
- forming a buffer layer on an InP substrate so as to be lattice-matched with the InP substrate;
- and
- sequentially alternately depositing In(Ga)As layers and In(Ga, Al, As)P layers that are greatly lattice-mismatched with each other on the buffer layer so as to form In(Ga, Al, P)As quantum dots.
A method for forming quantum dots, comprising:
- forming a buffer layer on an InP substrate so as to be lattice-matched with the InP substrate;
- and
- sequentially alternately depositing In(Ga)As layers and InAl(Ga)As layers that are greatly lattice-mismatched with each other on the buffer layer so as to form In(Ga, Al)As quantum dots using a self assembled method using the lattice-mismatch between the In(Ga)As layers and the InAl(Ga)As layers and a phase separation caused by a growth behavior of a III-group material for constituting the In(Ga)As layers and the InAl(Ga)As layers.
A method for forming quantum dots, comprising:
- forming a buffer layer on an InP substrate so as to be lattice-matched with the InP substrate;
- and
- sequentially alternately depositing In(Ga)As layers and In(Ga, Al, As)P layers that are greatly lattice-mismatched with each other on the buffer layer so as to form In(Ga, Al)As quantum dots using a self assembled method using the lattice-mismatch between the In(Ga)As layers and the In(Ga, Al, As)P layers and an alternate growth method.
Dependencies are inferred from the claim text.