Semiconductor laser device and manufacturing method therefor

Abstract

On an n-type GaAs substrate 19 are formed an n-type GaAs buffer layer 20, a non-doped AlxGa1-xAs light guide evaluation layer 21, an n-type AlxGa1-xAs first clad layer 22, an n-type AlxGa1-xAs second clad layer 23, a non-doped AlxGa1-xAs first light guide layer 24, a non-doped AlxGa1-xAs quantum well active layer 25, a non-doped AlxGa1-xAs second light guide layer 26, a p-type AlxGa1-xAs first clad layer 27, a p-type GaAs etching stop layer 28, a p-type AlxGa1-xAs second clad layer 29 and a p-type GaAs cap layer 30. The Al crystal mixing ratio of the light guide evaluation layer 21 is equal to that of the first and second light guide layers 24, 26. The semiconductor laser device allows the control of layer thickness and material composition of the light guide layers to be fulfilled with simplicity and high precision.

Dependencies are inferred from the claim text.