Transistor layout configuration for tight-pitched memory array lines
AssigneeSanDisk 3D LLC
InventorsChristopher Petti, Roy Scheuerlein, Tanmay Kumar, Abhijit Bandyopadhyay
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AssigneeSanDisk 3D LLC
InventorsChristopher Petti, Roy Scheuerlein, Tanmay Kumar, Abhijit Bandyopadhyay
Estimating the term…
A multi-headed word line driver circuit incorporates bent-gate transistors to reduce the pitch otherwise achievable for interfacing to tightly-pitched array lines. In certain exemplary embodiments, a three-dimensional memory array includes multiple memory blocks and array lines traversing horizontally across at least one memory block. Vertical active area stripes are disposed beneath a first memory block, and a respective plurality of bent-gate electrodes intersects each respective active area stripe to define individual source/drain regions. Every other source/drain region is coupled to a bias node for the active area stripe, and remaining source/drain regions are respectively coupled to a respective array line associated with the first memory block, thereby forming a respective first driver transistor for the respective array line. In certain embodiments, a respective plurality of complementary array line driver circuits is disposed on each side of a connection area between adjacent memory blocks, and each such driver circuit is responsive to a single driver input node.
An integrated circuit comprising:
A method comprising:
An integrated circuit comprising:
Dependencies are inferred from the claim text.